Μνήμες Ram Laptop

The single-channel F3-1600C11S-4GRSL consists of a 4 GB DDR3-1600 SO-DIMM (PC3-12800) from G.Skill. The module is tested for the latencies of 11-11-11-28 at 1600 MHz. The 204-pin Unbuffered SO-DIMM module is equipped with FBGA-chip and has gold-plated contacts.

This single-channel F3-1600C9S-4GSL consists of a 4 GB DDR3-1600 SO-DIMM (PC3-12800) from G.Skill. The module is tested for the latencies of 9-9-9 at 1600 MHz. The 204-pin Unbuffered SO-DIMM module is equipped with FBGA-chip and has gold-plated contacts.

The Transcend JetRam JM2666HSH 4G is a 4 GB DDR4-2666 memory module (PC4-21300) in SO-DIMM form factor. The module 260 supports pins 19 at a timing of 2666 MHz and requires 1.2 V voltage.

The G.Skill F3-10666CL9S-4GBSQ is a 4 GB DDR3 PC-10666 memory module (1333 MHz, CL9). The 204-pin Unbuffered SO-DIMM module is equipped with FBGA chips and has gold-plated contacts.

MODULE RAM S OR DDR4 4GB PC2400 Goodram S MODULE OR DDR4 4GB PC2400 Goodram CL17 GR2400S464L17S 4G

The Crucial CT4G4SFS8266 is a 4 GB DDR4-2666 memory module (PC4-21300, CL19). The 260-pin unbuffered-SO-DIMM requires 1.2 volts.

Warranty: Limited Lifetime Fan Included: No Heat Spreader: — Memory Configuration: Single Module Memory Type: DDR3 Package Memory Format: SODIMM Package Memory Pin: 204 Performance Profile: None Memory Size: 4GB Kit (1 x 4GB) SPD Latency: 9-9-9-24 SPD Speed: 1333MHz SPD Voltage: 1.5V Speed Rating: PC3-12800 (1600MHz) Tested Latency: 11-11-11-30 Tested Speed: 1600MHz Tested Voltage: 1.5V

Type DDR4 SDRAM colour black EAN 0843591067355 Manufacturer no. CMSX4GX4M1A2400C16 series Vengeance capacity 4 GB number 1 piece design SO-DIMM connection 260-pin tension 1.2 volts default DDR4-2400 (PC4-19200) physical clock 1200 MHz timings CAS Latency (CL) 16 RAS-to-CAS Delay (tRCD) 16 RAS precharge time (t RP) 16 Row Active Time (t RAS) 39 additional Information DDR4 is the further development of DDR3 and offers over the predecessor a number of innovations and advantages such as up to 40% lower energy consumption, higher speeds, higher data density (allows storage modules with a capacity of up to 128 GB, the future up to 512 GB), as well as improved stability in operation by advanced error correction techniques such as CRC (Cyclic Redundancy check), CMD / ADD (on-chip parity detection) and "Per DRAM address Ability".